Abstract
This paper presents a general signal and layout analysis for the two-transistor, one-capacitor DRAM cell. The 2T, 1C configuration enables significantly larger, typically /spl gsim/3x, raw sense-signal than is achievable in conventional 1T, 1C cells. In general, stray capacitances at the capacitor nodes further increase the signal level; an exact analytic formula is derived in this case, including the dependence upon bitline precharge level. With trench technology, the 2T, 1C cell occupies 25-30% more area than a corresponding folded-bitline 1T, 1C cell; an implementation employing a buried strap is proposed. Maximization of array density requires multiplexing bitlines to sense amps.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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