Abstract

This work demonstrates a large-scale batch fabrication of GaN light-emitting diodes(LEDs) with patterned multi-layer graphene (MLG) as transparent conducting electrodes.MLG films were synthesized using a chemical vapor deposition (CVD) technique on nickelfilms and showed typical CVD-synthesized MLG film properties, possessing a sheetresistance of with a transparency of more than 85% in the 400–800 nm wavelength range. The MLGwas applied as the transparent conducting electrodes of GaN-based blue LEDs, andthe light output performance was compared to that of conventional GaN LEDswith indium tin oxide electrodes. Our results present a potential developmenttoward future practical application of graphene electrodes in optoelectronic devices.

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