Abstract
Ultraviolet (UV) photodetection has been of great importance in the fields of aerospace, space communications, and remotely sensed images. However, conventional UV photodetectors (PDs) have been facing intrinsic drawbacks of complicate structural issues and interference from ambient visible light. Therefore, wide bandgap semiconductors have attracted significant attention. Herein, self-powered PDs based on the monolithic germanium disulfide (m-GeS2)/gallium nitride (GaN) pn heterojunction have been proposed with a large-size m-GeS2 over 2 cm2. The electronic and optical properties of the m-GeS2/GaN heterojunction are investigated via experiments and first-principles methods. The PDs reveal an impressive performance in self-powered response and high responsivity and detectivity of 16.8 mA W−1 and 1.03 × 1011 Jones, respectively. Further analyses determined that the PDs show an ultrafast photoresponse with a rise and fall time of < 0.30 and 1.10 ms at 365 nm. Consequently, this study provides a feasible method for the synthesis of large-sized m-GeS2 and demonstrates its enormous potential in high-performance, self-powered UV photodetection.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
