Abstract
The rectification behavior of two and three separated armchair graphene nanoribbons (AGNRs) which one of them plays the role of channel and others play the role of side gates is investigated. The tight-binding density functional approach (DFTB) and non-equilibrium Green function method (NEGF) are employed for calculations. The nitrogen (N) and boron (B) atoms are used to dope the side gates. The results show that these devices have low threshold voltage and their rectification ratios are higher than one doped AGNR device, with the maximum value of 3.18 × 108. Also, without doping the channel, it can become to n-type or p-type semiconductor, only by doping the side gates. The current-voltage characteristics of these devices are similar and have little dependence on side gates width.
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