Abstract
Abstract We fabricated conductive SrTaO3 epitaxial films on insulator substrates and measured Rashba parameter using weak anti-localization analysis. The Rashba parameter, reaching up to 9.9×10-13 eVm, is the highest among metallic oxides and is comparable to the LaAlO3/SrTiO3 interface, which is widely used in Rashba effect studies. This indicates the potential for oxide-based spintronic devices. To use them as devices, it is important to investigate how film thickness affects resistivity. Films ranging from 8.6 to 25 nm exhibited metallic conduction, but those thicker than 25 nm showed an unexpected increase in resistivity, suggesting instability of the meta-stable Ta4+ state
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
