Abstract
We report the pyroelectric response of c-axis oriented, undoped, wurtzite, aluminum nitride reactively sputtered onto polished silicon wafers. The voltage between a metallic contact on the AlN surface and the n + -doped silicon substrate was monitored during pulsed infrared, radiant heating. From analysis of the data, a pyroelectric voltage coefficient, P v , in excess of 0.5 × 10 6 V/m/K was extracted for films in the 600 to 2500 A thickness range.
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