Abstract
We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications.
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