Abstract
We report in this letter on an interesting and unexpected effect which is not fully understood yet. Strong hydrogen-implanted accumulation layers on ZnO surfaces, produced and maintained at 80 K, can be further enhanced by illumination with visible light. The enhancement attained is surprisingly large, amounting to a twofold increase in surface electron density, up to 6×1014 cm−2. The photoenhanced layer is less than 10–20 Å in width, thus constituting a two-dimensional electron system, which is by far the strongest ever attained on any semiconductor surface. Measurements of the electron transport characteristics and of the spectral response of the photoenhancement process are presented.
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