Abstract
Herein, we report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO2) nanoparticles-based antireflection coating. The nanoparticles are embedded in a dielectric matrix (SiN) which improves the antireflection property of SiN (lambda /4 coating) and let to pass more photons into the GaAs layer. The improvement is noticed omnidirectional and the highest is more than 100% at 85° angle of incidence with the nanoparticles’ surface filling density of 70%. Sunrise to sunset calculation of normalized photocurrent density over the course of a year have also shown improvements in the nanoparticles’ case.
Highlights
We report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO2) nanoparticles-based antireflection coating
Ha et al demonstrated experimentally more than 30% efficiency gain by using SiO2 NPs on a GaAs solar cell[14]
Ha et al have reported more than 8% enhancement in the current density with 70% surface coverage by SiO2 NPs on a GaAs solar cell at normal incidence comparing to a bare GaAs solar cell[11]
Summary
We report a theoretical investigation of large photocurrent density enhancement in a GaAs absorber layer due to non-absorbing spherical dielectric (SiO2) nanoparticles-based antireflection coating. We perform an analytical modelling on a structure in which SiO2 NPs are embedded in a dielectric ARC (SiN), called /4 coating, on a GaAs layer. Thin film SiN ARC layer shows high transmittance for the thickness 60–80 nm over a wide range of AOI
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