Abstract
We have investigated optical nonlinearity in low-temperature (LT) molecular-beam-epitaxy-grown GaAs/AlAs multiple quantum wells (MQWs). Minimum saturation intensity, that is, maximum optical nonlinearity, is observed at around the excitonic absorption peak. The saturation intensity of the LT MQW is smaller by an order of magnitude than that of LT bulk GaAs. The response time of the LT MQW is 1/4–1/2 of the LT GaAs, and becomes less than 1 ps, corresponding to ∼1/400 of the standard-temperature-grown MQW. These results demonstrate a clear advantage of the room-temperature excitons in the LT MQW having large optical nonlinearity as well as fast response time.
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