Abstract
The operating frequencies of current position-sensitive detectors (PSDs) based on lateral photovoltaic effect (LPE) are mainly concentrated in the visible or ultraviolet region. Here we report a remarkable near-infrared-sensitive LPE in nanoscale metal-semiconductor structures of Co/Si. We show that by manipulating the Co thickness, the optimum light wavelength for obtaining the largest LPE in such Co/Si structures can be controlled in infrared region. Besides, the observed lateral photovoltage position sensitivity of 82 mV/mm at 832 nm light wavelength in Co(3.5 nm)/Si is considerably large, suggesting this simple structure a potential candidate for infrared-sensitive PSDs.
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