Abstract
We present an effective scheme to improve the modulation capacity in graphene-based silicon modulator by employing the double slots configuration with hybrid plasmonic effects. Two modulators, i.e., metal-insulator-metal and insulator-metal-insulator configurations have been demonstrated, showing that the double slots design can significantly improve the modulation efficiency. The obtained modulation efficiency is up to 0.525 dB/μm per graphene layer, far exceeding previous studies. It can be found that the light-graphene interaction plays a pivotal role in the modulation efficiency, whereas the height of metal has profound influence on the modulation. Our results may promote various future modulation devices based on graphene.
Highlights
Graphene optics, in tandem with silicon devices, have received much attention in the past two decades[1]
We design novel modulators based on double-slots plasmonic waveguide (DSPW) with enhanced light-graphene interaction
Our results show that the modulation efficiency (ME) in the designed DSPW modulators can be significantly improved than all previous results
Summary
Two kinds of DSPWs have been proposed, i.e., the insulator-metal-insulator (IMI) configuration and the metal-insulator-metal (MIM) configuration. Unlike previous IMI case, the leaking modes gathering at the two sidewalls disappear, and all the intrinsic modes are concentrated in the central region, most of which are filled inside the slot areas This is because the decrease of HAg introduces sharp metallic corners in the slot region, which enhances the hybrid plasmonic effects, and enlarge the EIF factor according to Eq (1). Our results may benefit the design of high-performance on-chip electro-optical modulator
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