Abstract
Microwave magnetoelectric coupling in a ferroelectric/ferromagnetic/semiconductor multiferroic (MF) heterostructure, consisting of a Co2MnAl epitaxial film grown on a GaAs substrate bonded to a lead magnesium niobate–lead titanate (PMN-PT) crystal, is reported. Ferromagnetic resonance measurements were carried out at X-band under the application of electric fields. Results indicate a frequency tuning of 125 MHz for electric field strength of 8 kV cm−1 resulting in a magnetoelectric coupling coefficient of 3.4 Oe cm kV−1. This work explores the potential of electronically controlled MF devices for use in future monolithic microwave integrated circuits.
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