Abstract
We have observed a large increase in the magnetoresistance (MR) of polycrystalline and epitaxial thin Bi films, which were subjected to a post-annealing procedure at 3°C below the Bi melting point. We have achieved an increase in the MR by a factor of 2560 at 5 K as compared with 343 for an as-grown epitaxial film due to enhanced carrier mobilities.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
