Abstract
Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. Here we demonstrate good strain transmission at the incoherent interface between a strain-released film of epitaxially grown ferromagnetic La0.7Sr0.3MnO3 and an electroactive substrate of ferroelectric 0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 in a different crystallographic orientation. Our strain-mediated magnetoelectric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film magnetization via strain and dislocations. Moreover, the electrical switching of magnetic anisotropy is repeatable and non-volatile. High-resolution magnetic vector maps reveal that micromagnetic behaviour is governed by electrically controlled strain and cracks in the film. Our demonstration should inspire others to control the physical/chemical properties in strain-released epitaxial oxide films by using electroactive substrates to impart strain via non-epitaxial interfaces.
Highlights
Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties
Transition metal perovskite oxide films have not been hitherto transferred to electroactive substrates, but one may anticipate viable strain coupling in light of the fact that film properties can be mechanically manipulated via mechanically formed interfaces, as seen for manganite films transferred to flexible substrates[41,42], and two-dimensional structures transferred to electroactive substrates[43]
Samples will be labelled LSMO:PMN-PT, without reference to the Pt electrodes that are considered as if they were an integral part of the PMN-PT substrate, and without reference to an amorphous interfacial layer that we observed in cross-sectional scanning transmission electron microscopy (STEM) (Fig. 1b)
Summary
Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. The key properties of transition metal perovskite oxides are degraded following epitaxial growth on ferroelectric substrates, as seen for ferromagnetic films with reduced Curie temperatures and suppressed magnetizations[17,18,23]. This degradation is a consequence of the >3% lattice-parameter mismatch that causes films to experience both strain and dislocations[17,18,24,25,26], even if epitaxial buffer layers are present[27]. We choose STO as the growth substrate because of its small (~1%)
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
