Abstract
Strain effect on the low-field magnetoresistance (LFMR) in epitaxially grown Pr0.67Sr0.33MnO3 thin films has been studied. Very large LFMR and MR hysteresis have been found in compressive-strain ultrathin films grown on LaAlO3 (001) substrates when a magnetic field is applied perpendicular to the film plane. The LFMR ratio as high as 360% at H=1600 Oe and T=30 K was obtained from the MR hysteresis curve. The large LFMR depends strongly on the applied magnetic field direction as well as the film thickness. It is reduced to less than 10% when the film thickness is about 20 nm. In comparison, tensile-strain films on SrTiO3(001) show positive LFMR, and almost strain free films on NdGaO3 (110) show very small LFMR (<2%), at comparable magnetic fields and temperatures. These effects were found to be closely related to the strain-induced magnetic anisotropy.
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