Abstract

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structures.

Highlights

  • Since the lateral photovoltaic effect (LPE) effect was first discovered by Schottky [1] and later in 1957 expanded upon by Wallmark in floating Ge p-n junctions [2], it was boosted very quickly in many different semiconductor systems, such as Ti/Si amorphous superlattices [3,4,5,6], modulation-doped AlGaAs/GaAs heterostructures [7], hydrogenated amorphous silicon Schottky barrier structures [8,9,10,11,12,13], organic

  • Due to the fact its output of lateral photovoltage (LPV) changes linearly with light spot position, this effect can be used in position-sensitive detectors (PSDs) which can detect very small displacements [22,23,24,25,26,27,28,29,30,31,32,33,34,35]

  • PSDs based on the LPE can provide continuous optical information over large areas with no internal discontinuities, which is the major advantage over arrayed discrete devices such as charge coupled devices and photodiodes

Read more

Summary

Introduction

The lateral photovoltaic effect (LPE) is an attributive character of some semiconductor structures. Since the LPE effect was first discovered by Schottky [1] and later in 1957 expanded upon by Wallmark in floating Ge p-n junctions [2], it was boosted very quickly in many different semiconductor systems, such as Ti/Si amorphous superlattices [3,4,5,6], modulation-doped AlGaAs/GaAs heterostructures [7], hydrogenated amorphous silicon Schottky barrier structures [8,9,10,11,12,13], organic. The main area of application of PSDs is in precision optical alignment, such as biomedical applications, robotics, process control, medical instrumentation, and position information systems [36,37,38,39]. MS and MOS structures are versatile materials and have been treated as solar cells for many decades [58,59,60,61,62,63], but they serve as LPE materials is pretty new, in particular their large LPE can be directly obtained or measured on the metal side

Fabrication and Measurement
LPE in MS Structure
LPE in MOS Structure
Metal Thickness Effect
Oxide Thickness Effect
The Influence of Laser Power and Wavelength on LPE
Vertical Offset Effect
Electron Transition
Carrier Diffusion
Energy Band Profile
LPV Sensitivity and Nonlinearity
Selection of Materials
Effective Linear Area
Conclusions

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.