Abstract
In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated microcrystal silicon-oxygen (µc-SiOx:H)-based p–i–n structure. Compared with LPE in a hydrogenated amorphous silicon (a-Si:H)-based p–i–n structure, this structure showed an abnormal current–voltage (I–V) curve with a lower photoelectric conversion efficiency, but exhibited a much higher LPE with the highest position sensitivity of 64.3 mV/mm. We ascribe this to the enhancement of the lateral gradient of excess transmitted carriers induced by increasing both Schottky barrier and p-type layer body conductivity. Our results suggest that this µc-SiOx:H-based p–i–n structure may be a promising candidate for position-sensitive detectors (PSDs). Moreover, our results may also imply that solar cell devices with abnormal I–V curves (or low efficiency) could find their new applications in other aspects.
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