Abstract
A rather large irreversible lateral photovoltage (LPV) effect has been observed in Cu2O/Si heteroepitaxial junctions. Large output voltage and high linearity indicate that a Cu2O/Si heterojunction is competent to be a new candidate for position-sensitive photodetectors. The irreversible LPV on both sides of the junction challenges the Dember effect which was usually introduced to explain this phenomenon in oxide heterojunctions. A mechanism based on the difference of carrier mobility in each side of the junction has been applied, and a diffusion recombination model is later confirmed experimentally by applying an external bias.
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