Large intrinsic inductance in strongly correlated GaAs two-dimensional holes in the integer quantum hall regime

Abstract

Quantum Hall measurements are performed for a two-dimensional hole system (2DHS) confined to a 20 nm quantum well in ⟨100⟩ GaAs. Quantum oscillations reveal a density of 4 - 5×1010 cm−2 with mobility μ = 1 × 106 cm2/V s. For temperatures less than ∼350 mK, anomalous insulating peaks are observed between integer fillings 1-2, 2-3, and 3-4. A large out-of-phase signal appears at these peaks, which indicates a substantial inductance inherent to the charge carriers.