Abstract
Large InSe single crystals have been grown by the Bridgman-Stockbarger method, starting from stoichiometric and non-stoichiometric melt. The In molar fraction in the melt has been varied between 51% and 55% of the starting mixture in steps of 1%. The best crystals have been obtained from a molar mixture containing 52% In and 48% Se. All the obtained crystals examined with electron diffraction showed a hexagonal structure. The presence of dislocations has been evidenced by electron microscopy also in the best crystals. Finally, a comparison has been made between the electrical properties of the crystals grown from stoichiometric and non-stoichiometric melts.
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