Large Hall angle-driven magneto-transport phenomena in topological Dirac semimetal Cd3As2

Abstract

We report the electrical transport properties of topological Dirac semimetal Cd3As2. Unlike the ordinary Hall resistance with linear slope and the parabolic magnetoresistance (MR) in conventional semiconductors, the linear-band dispersion in this system give rise to a high electron mobility of 3.4 × 104 cm/V s and a giant linear MR exceeding 5 × 103% at 2.1 K. More importantly, the large Hall angle-induced phenomena can be captured by applying a generic two-band magneto-transport model on both the Hall and MR data, and the fitting results are consistent over the entire temperature range from 2.1 K to 350 K. Furthermore, the large-Hall-angle condition also enables the observation of distinct quantum oscillations with non-trivial band topology of the Cd3As2 sample at low temperatures. Our work provides a general approach to investigate the high-mobility topological Dirac semimetals and their potential applications.