Abstract

Techniques for achieving large grain structure (2–5 μm diameter crystallites) in thin Te films (∼ 1000 Å thick) via Au-nucleation and annealing are discussed. X-ray diffraction data from annealed Te films indicate high quality Te grains which are preferentially oriented (with (100) planes parallel to the substrate). A method for forming tellurium oxide via plasma anodization of Te films is also discussed.

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