Abstract
A large field emission current density of 2.55A/cm2 at 20.9V and a low turn-on voltage of 7.28V is obtained from the Si-doped 50nm-thick AlN film, synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates, which is the best result reported for AlN film. Accompanying with atomic force surface micro-images, it is found that this current is achieved owing to a blunting process under a high voltage of 95V, which can lead to a decrease of the root mean square roughness from 4.23 to 1.03nm.
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