Abstract
In this work, we demonstrate an approach to improve the recoverable energy-storage performance and piezoelectric response of 0.4Bi(Ni1/2Zr1/2)O3-0.6PbTiO3 (BNZ-PT) relaxor-ferroelectric film capacitors by utilizing the seeding layers engineering. Highly (100)-oriented BNZ-PT films were prepared through alternatively introducing PbO seeding layers, and the effects of PbO seeds on microstructure and electrical properties were investigated in details. Compared to the films without seeds, the PbO-seeded BNZ-PT films exhibit significant enhancement in dielectric and piezoelectric properties as well as energy-storage performance. The maximum energy-storage density of 56.1±2.4 J/cm3 and a piezoelectric coefficient as high as 125±10 pm/V have been achieved in the highly (100)-oriented BNZ-PT films at 2167 kV/cm, which are increased by 40.6% and 50.6% compared to the films without seeds, respectively. The observed tremendous enhancement of energy-storage performance and piezoelectric response can be attributed to the better crystallization quality and higher degree of (100)-preferred orientation in the films which would motivate higher domain-wall mobility.
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