Abstract
MnBixAl0.15 (0.4 x0.9) thin films with an Al protective layer have been prepared using e-beam evaporation. The Kerr rotation as a function of the Bi concentration, x, has been investigated. Compared with MnBix thin films, it is found that a large enhancement of Kerr rotation appears in the MnBixAl0.15 thin films with 0.4 x<0.7, but no enhancement of Kerr rotation appears when x is greater than 0.7. When x = 0.5, a maximum Kerr rotation of 2.75° is observed at 633 nm for the MnBi0.5Al0.15 thin film, which is much larger than that of 1.56° for the MnBi0.5 thin film. The possible reason for the enhancement of Kerr rotation is discussed.
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