Abstract
In this work, high performance (Pb0.97La0.02)(Zr0.66Sn0.23Ti0.11)O3 polycrystalline antiferroelectric thin-film was successfully fabricated on (La0.7Sr0.3)MnO3/Al2O3(0001) substrate via a cost-effectively chemical solution method. A large recoverable energy storage density (Wre) of 46.3 J/cm3 and high efficiency (η) of 84% were realized simultaneously under an electric field of 4 MV/cm by taking full advantage of the linear dielectric response after the electric field induced antiferroelectric-ferroelectric transition. Moreover, the PLZST thin-film displayed high temperature stability. With increasing temperature from 300 K to 380 K, the Wre decreased only 1.3%. The film also exhibited good fatigue endurance up to 1 × 105 cycling under an electric field of 2.2 MV/cm. Our work underlines the importance of the interface quality between the film and the substrate and the important role of linear dielectric answer after saturation in the improvement of the energy storage density and efficiency of antiferroelectric materials.
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