Abstract
Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1−xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p–i–n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L (X) energy separations in InxGa1−xAs. The experimental results are compared with ensemble Monte Carlo calculations.
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