Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example

Abstract

Compared to silicon substrates, III–V materials based on GaAs and/or InP are generally limited to small diameters, up to 150 mm for GaAs and 100 mm for InP, even though bulk wafers of 150 mm diameter have already been sampled. Herein, a new technology is proposed to extend the diameter of these materials by combining the Smart Cut technology, which is based on wafer bonding and layer transfer techniques, with tiling. In this unique approach, the donor substrate used in the layer transfer step is not a simple bulk wafer (limited in diameter), but a large‐diameter rebuilt wafer produced by tiling many coupons of wafers, which are cut from bulk III–V substrates of small diameter. As already established in high‐volume manufacturing schemes for silicon on insulator substrates generated through the Smart Cut process, the donor substrate can be repeatedly reclaimed and reused, allowing this approach to be economically viable. Herein, the production of an InP film of 200 mm diameter on silicon substrates is investigated and successfully demonstrated. This generic approach can be adapted to produce other large‐diameter III–V on Si substrates, including those of 300 mm diameter.