Abstract
Experimental and theoretical results are presented on the evolution of large elastic deformation, non-uniform curvature, shape changes and geometric instability in substrates of Si wafers with metal films. The critical diameter and thickness of the Si wafer, for which large deformation and shape instability occur, are identified, as functions of the line tension in the film (which is the product of the biaxial stress in the film and the film thickness). Observations of the curvature and shape variations along the wafer diameter and geometry-dependence of the shape instability compare favorably with those predicted by detailed finite element analyses.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
