Abstract
AbstractThe semiconductor laser diode SPL LL90_3, which integrates the RC charge‐discharge circuit and a MOSFET switching device, is usually used for pulsing laser in the light detection and ranging system with a rated peak power of 70 W at 30 ns pulse‐width. To further increase the peak power and reduce the pulse width and rising edge, a driving circuit with an avalanche transistor used as a pre‐switching device is proposed. A trigger pulse with about 10 ns’‐pulse‐width is obtained to drive the laser diode. At the same time, the pulsing laser's peak power can reach 141 W at the testing repetition rate of 55 kHz.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
