Abstract
Realization of Photonic Integrated Circuits (PIC) requires spatially selective control over the optical and electrical characteristics of the multiple quantum well (QW) material. One of the simplest and most promising approaches to integration based on QW active layers is selective modification of the bandgap, after growth, by intermixing the well and barrier materials to form an alloy. This process causes rounding of the initially square QW bandgap profile and generally increasing the band gap [1]. The amount of blue shift is of great importance for heterogeneous, monolithic integration of optoelectronic devices, examples of which are equalizers/amplifiers for Wavelength Division Multiplexing (WDM) applications in general, and Coarse Wavelength Division Multiplexing (CWDM) applications in particular, where operation band may span over several hundred nanometers.
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