Abstract
A bandgap blue shift of 142nm with enhanced photoluminescence (PL), is demonstrated experimentally. in an InGaAsP/InP quantum well (QW) structure using KrF excimer laser induced quantum well intermixing (QWI) technique. The simple process only involves irradiation of UV pulses from a KrF excimer laser, followed by rapid thermal annealing (RTA) at 750 °C for 2 minutes. The absorption constant at the original band-edge is reduced to only 20dB/cm for the QWI waveguide. The fabricated QWI FP laser also has excellent optical and electrical properties, showing good potential for applications in monolithic integrated multibandgap devices.
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