Abstract
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe3GeTe2 (FGT)—a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism (FM)—directly on graphene by employing molecular beam epitaxy. Morphological and structural characterization confirmed the realization of large-area, continuous FGT/graphene heterostructure films with stable interfaces and good crystalline quality. Furthermore, magneto-transport and x-ray magnetic circular dichroism investigations confirmed a robust out-of-plane FM in the layers, comparable to state-of-the-art exfoliated flakes from bulk crystals. These results are highly relevant for further research on wafer-scale growth of vdW heterostructures combining FGT with other layered crystals such as transition metal dichalcogenides for the realization of multifunctional, atomically thin devices.
Highlights
Introduction Layered magnetic materials such asCr2Ge2Te6 [Gon17], CrI3 [Hua17], CrTe2 [Pur20], and Fe3GeTe2 [Den18] are considered to be promising building blocks for the development of ultracompact spintronic devices with faster response and low-power dissipation
We report on van der Waals epitaxy of the layered magnetic metal Fe3GeTe2 – a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism – directly on graphene by employing molecular beam epitaxy
In spite of this observation, the weak nature of van der Waals (vdW) interactions is generally believed to alleviate the need for lattice matching conditions [Kom92], so that via vdW epitaxy of FGT on top of 2D crystals such as graphene, hexagonal BN (h-BN), and transition metal dichalcogenides (TMDCs) should enable the transfer-free, scalable realization of 2D heterostructures exhibiting atomically smooth vdW interfaces
Summary
Introduction Layered magnetic materials such asCr2Ge2Te6 [Gon17], CrI3 [Hua17], CrTe2 [Pur20], and Fe3GeTe2 [Den18] are considered to be promising building blocks for the development of ultracompact spintronic devices with faster response and low-power dissipation. We report on van der Waals (vdW) epitaxy of the layered magnetic metal Fe3GeTe2 – a 2D crystal with highly tunable properties and a high prospect for room temperature ferromagnetism – directly on graphene by employing molecular beam epitaxy.
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