Large area uniform PtSx synthesis on sapphire substrate for performance improved photodetectors

Abstract

PtSx, as a more recent 2D material that aroused extensive research interests, has been applied in electronic and optoelectronic devices because of its excellent electronic characteristics and commendable stability. However, the synthesis of large-scale uniform PtSx remains a challenge. Here we studied a modified chemical vapor deposition (CVD) method to grow large-scale uniform PtSx films on SiO2/Si and c-plane sapphire substrates, which can avoid some disadvantages of the mechanical exfoliation method in the device fabrication. The large area uniform PtSx films are achieved through Pt sulfurization using H2S gas, replacing the sulfur powder in traditional methods, as the sulfur source. The material characterizations successfully proved that our modified CVD method is feasible and repeatable, and the PtSx film can be synthesized on different substrates. The PtSx photodevices show good photoresponse properties with a wide spectrum response range. The PtSx/sapphire device shows a better photoresponse in terms of the detectivity (9.17 × 109 Jones) and the responsivity (0.31 A W−1) than that of the PtSx/SiO2/Si device in our experiment, as well as one-year air stability, which may be caused by the different PtSx film quality due to a lattice mismatch difference between the PtSx and the different substrates. The results offer the design and synthesis technology for large-scale, uniform, and stable PtSx film, as well as an example of photoresponse-enhanced devices which could be generalizable to other transition metal dichalcogenides (TMDCs) and devices for future development and applications.