Abstract
Graphene has attracted much attention at various research fields due to its unique optical, electronic and mechanical properties. Up to now, graphene has not been widely used in optoelectronic fields due to the lack of large-area uniform doped graphene (n-doped and p-doped) with smooth surface. Therefore, it is rather desired to develop some effective doping methods to extend graphene to optoelectronics. Here we developed a novel doping method to prepare large-area (> centimeter scale) uniform doped graphene film with a nanoscale roughness(RMS roughness ∼1.4 nm), the method (nano-metal film doping method) is simple but effective. Using this method electron doping (electron-injection) may be easily realized by the simple thermal deposition of Ag nano-film on a transferred CVD graphene. The doping effectiveness has been proved by Raman spectroscopy and spectroscopic ellipsometry. Importantly, our method sheds light on some potential applications of graphene in optoelectronic devices such as photodetectors, LEDs, phototransistors, solar cells, lasers etc.
Highlights
Using graphene as a p-n junction in the semiconductor field has been of great interest since the discovery of graphene by K
Doping methods of graphene are usually classified into three categories: elemental doping, chemical charge induction and metal doping
Large-area uniform graphene doping method with a nanoscale roughness is rather important for development of optoelectronic devices such as photodetectors, LEDs, phototransistors, solar cells, lasers etc
Summary
Using graphene as a p-n junction in the semiconductor field has been of great interest since the discovery of graphene by K. The molecules or polymer solution is spin-coated on the graphene surface. This approach can preserve the integrity and smoothness of graphene. The spin-coating requirement may restrict the large area (in the scale of several or tens of inches), uniform doping of graphene. Large-area uniform graphene doping method with a nanoscale roughness is rather important for development of optoelectronic devices such as photodetectors, LEDs, phototransistors, solar cells, lasers etc. The graphene was determined to be monolayer by Raman spectroscopy.[25,26] This method realizes large-area (not less than 30 inches)[27] production of low cost and high quality electron doped graphene, which is compatible with a wide range of industrial applications
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