Abstract
Silicon ribbons were grown in the presence of some air back-streaming and were consistently polycrystalline with little evidence of oriented growth from the seed. The problem of back-diffusion of air from the exit port has been eliminated, and clean growth conditions, as determined by silicon wafer film test, have been obtained in the redesigned seeded growth furnace. This furnace developed a water leak in the cooling nozzle, so it has not as yet been used to grow silicon. A new, vertical seeded growth furnace, which permits the seeding and initial crystal growth to take place below the alloy surface, has been designed and is being built.
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