Abstract
In this work we present the first time to our knowledge a large area Si-energy filter for ion implantation based on a 150 mm SOI Wafer Flow Process. The filter consists of a microstructured 125 mm diameter Si-membrane with 6.5 μm thickness supported by the remaining silicon wafer ring. These filters are of large importance in the cost effective doping of SiC for high power device fabrication. We will present in this work the Si-energy filter fabrication process, characterization results of single process steps and SIMS depth profiles after ion implantation which are in good accordance to the calculated simulation model. Additionally the impact of defects on the substrate is discussed in this work and mandatory steps are described to reduce the amount of holes in the finished membrane.
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