Abstract
Large area silicon drift detectors, consisting of 8 mm and 12 mm diameter hexagons, were fabricated on 0.35 mm thick high resistivity n-type silicon. An external FET and a low-noise charge sensitive preamplifier were used for testing the prototype detectors. The detector performance was measured in the range -75 to 25/spl deg/C using Peltier cooling, and from 0.125 to 6 /spl mu/s amplifier shaping time. Measured energy resolutions were 159 eV FWHM and 263 eV FWHM for the 0.5 cm/sup 2/ and 1 cm/sup 2/ detectors, respectively (at 5.9 keV, -75/spl deg/C, 6 /spl mu/s shaping time). The uniformity of the detector response over the entire active area (measured using 560 nm light) was <0.5%.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
