Abstract
An arrangement for large area PLD on 3-inch wafers is proposed. For in-situ deposited YBCO thin films on r-plane sapphire with YSZ buffer layer we inductively measured within 3 inch diameter values of the critical temperature T c(90%) from 85.9 K to 86.7 K and values of the critical current density j c(77 K) from 1 × 10 6 to 2 × 10 6 A/cm 2. Large area PLD seems to be a very promising technique for homogeneous coating of 3-inch wafers by epitaxial oxide thin films.
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