Abstract
Currently, bismuth oxychalcogenide family (Bi2O2X, XS, Se, Te), led by Bi2O2Se with unique characteristics, have emerged as promising candidates for high-performance optoelectronic devices. Herein, the novel Bi2O2S flowers with hierarchical structure have been successfully prepared via a facile hydrothermal method with only 3 h of reaction. The as-prepared Bi2O2S flower is composed of many ultrathin nanosheets (NSs) with a thickness of about 12–16 nm. And the possible formation mechanism of ultrathin NSs self-assembled Bi2O2S flowers is further analyzed. In addition, a self-powered infrared photodetector based on Bi2O2S flowers, which can work without an external power, is designed. Under illumination at 850 nm light, the Bi2O2S flowers photodetector exhibits well photoresponse switching behaviors, of which the high responsivity, specific detectivity and fast response time reach up to 9.48 mA/W, 9.96 × 1010 Jones and 227.7 ms, respectively. Of particular note, the Bi2O2S flowers photodetector also possesses the eximious stability.
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