Large‐area growth of monolayer MoS2 by using atmospheric‐pressure chemical vapor deposition with nucleation controlling process

Abstract

The epitaxial growth of high‐quality and large‐area monolayer (ML) MoS2 has attracted widespread attention in recent years. Here, MoS2 on Al2O3 substrate was prepared by using atmospheric‐pressure chemical vapor deposition. The process parameters such as temperature difference and distance between MoO3 and Al2O3, nucleation temperature, and heating rate were optimized. The high MoO3 evaporation temperature facilitates Mo vapor transport to grow ML‐MoS2. The introduction of nucleation temperature facilitates the deposition of MoS2, and the morphology of the nucleation point is related to the amount of MoO3‐x deposited on Al2O3. This process optimization method is also applicable to growth MoS2 on SiO2. The ML‐MoS2 with a size greater than 1 cm2 was successfully fabricated on Al2O3 and SiO2, which laid a foundation for the practical application of ML‐MoS2.