Abstract

We report a universal transfer methodology for producing artificial heterostructures of large-area freestanding single-crystalline WTe2 membranes on diverse target substrates. The transferred WTe2 membranes exhibit a nondestructive structure with a carrier mobility comparable to that of as-grown films (∼ 179–1055 cm2 · V−1 · s−1). Furthermore, the transferred membranes show distinct Shubnikov–de Haas quantum oscillations as well as weak localization/weak anti-localization. These results provide a new approach to the development of atom manufacturing and devices based on atomic-level, large-area topological quantum films.

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