Abstract
Large area dimer vacancy arrays can be formed on the Si(100) surface when Si atoms are deposited on the Si(100)-2×1 surface followed by quenching from 1200°C. The dimer vacancy lines (DVLs) of the dimer vacancy array run perpendicular to the dimer rows and the basic building cells of the DVLs are: (i) a cluster of two missing dimers; (ii) a complex of one missing dimer and a cluster of two missing dimers. Small isolated islands with DVLs like that of the Si(100) surface are observed on the surface. The precursors of the islands are investigated. The formation mechanism of the island is that the interaction between the stress field of the dimers on the Si(100) surface and that of the island causes the dimer vacancies in the dimer rows of the island and the attraction between the dimer vacancies in adjacent dimer rows aligns the dimer vacancies.
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