Large area deep ultraviolet light of Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum well with carbon nanotube electron beam pumping

Sung Tae Yoo,Okhyun Nam,Kyu Chang Park,Byeongchan So,Hye In Lee

doi:10.1063/1.5109956

Sung Tae Yoo, Okhyun Nam + Show 3 more

Open Access

https://doi.org/10.1063/1.5109956

Copy DOI

Abstract

Large area deep ultraviolet (DUV) light is generated by carbon nanotube (CNT) cold cathode electron beam (C-beam) irradiation on Al0.47Ga0.53N/Al0.56Ga0.44N multi quantum wells (MQWs) anode. We developed areal electron beam (EB) with CNT cold cathode emitters. The CNT emitters on silicon wafer were deposited with an area of 188 mm2, and these were vertically aligned and had conical structures. We optimized the C-beam irradiation conditions to effectively excite AlGaN MQWs. When AlGaN MQWs were excited using an anode voltage of 3 kV and an anode current of 0.8 mA, DUV with a wavelength of 278.7 nm was generated in a large area of 303 mm2. This DUV area is more than 11 times larger than the light emitting area of conventional EB pumped light sources and UV-LEDs.

Highlights

Electron beam (EB) pumped deep ultraviolet (DUV) light sources and UV light emitting diodes (UV-LEDs) are emerging as alternative UV lighting technologies of excimer lasers and mercury vapor lamps
UV-LEDs have been extensively studied, but their efficiency is low at sub 280 nm due to DUV absorption and lattice mismatch in AlGaN materials
Enhanced electron emission properties are attributed to the vertically aligned structure of Carbon nanotube (CNT) which is due to the growth by DC-PECVD and these CNTs are suitable for electron sources scitation.org/journal/adv of DUV lighting

Summary

Introduction

Electron beam (EB) pumped deep ultraviolet (DUV) light sources and UV light emitting diodes (UV-LEDs) are emerging as alternative UV lighting technologies of excimer lasers and mercury vapor lamps. Carbon nanotube (CNT) emitters have excellent properties and many groups are researching CNT emitters for vacuum nanoelectronics applications.13–16 Previously, we used CNT emitters as a cold cathode to generate DUV light with homemade Zn2SiO4 anode.16 CNT emitters were grown on silicon substrate with direct current plasma enhanced chemical vapor deposition (DCPECVD).17 Enhanced electron emission properties are attributed to the vertically aligned structure of CNTs which is due to the growth by DC-PECVD and these CNTs are suitable for electron sources scitation.org/journal/adv of DUV lighting.16 As a large area EB irradiation technology, we introduce carbon nanotube cold cathode electron beam (C-beam) pumping technique.

Results

Conclusion