Abstract

In this work, we demonstrated the large-area film growth of all-inorganic perovskite CsPbBr3 with semiconductor industry compatible radio frequency magneton sputtering technology. This approach avoids the use of toxic organic solvents, which are required extensively for the solution growth process of these perovskite films. Even on ordinary glass substrates, the CsPbBr3 film of 100 cm2 with a single phase and ultra-smooth surface can be grown under optimized sputtering conditions, among which the substrate temperature is proved very important. Temperature-dependent photoluminescence spectra and femtosecond transient absorption spectra studies show that no subband defect levels are observed in such perovskite films. The temperature-dependent resistivity measurement exhibits a typical thermally activated electrical behavior, and a bandgap of 2.24 eV is obtained, which is consistent with the optical measurements. Therefore, both the optical and electrical studies indicate that the CsPbBr3 film with high optical quality can be grown with effective one-step sputtering technology.

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