Abstract

The potential of passivating contacts incorporating in situ phosphorus (P)-doped polycrystalline silicon (poly-Si) films grown by low pressure chemical vapor deposition (LPCVD) is demonstrated in this work by integrating these layers at the rear side of large-area (241.3 cm 2 ) bifacial n-type Tunnel Oxide Passivated Contact (n-TOPCon) solar cells with diffused front emitter and screen-printed contacts. In situ doped poly-Si films are studied as their use could simplify the production of industrial n-TOPCon solar cells compared to the common approach relying on ex situ doping of intrinsic LPCVD poly-Si films. The developed poly-Si passivating contacts exhibited excellent characteristics with low recombination current densities in passivated and screen-printing metallized regions down to 2.3 fA/cm 2 and 65.8 fA/cm 2 , respectively, and a low contact resistivity of 2.0 mΩ⋅cm 2 . For reaching the best passivating contact characteristics and high solar cell efficiencies, a poly-Si film thickness of 150–200 nm was found to be optimal while a polished rear surface morphology was found to be beneficial. The best solar cell reached a certified power conversion efficiency of 23.01% along with a high open circuit voltage of 691.7 mV, enabled by the passivating contacts with the in situ doped poly-Si films. 1-cell glass-glass laminates were also fabricated with the developed solar cells, which showed no loss in their power output both upon 400 thermal cycles and after 1000 h of damp heat testing. Lastly, a roadmap is presented, indicating strategies to achieve efficiencies up to 25.5% with n-TOPCon solar cells incorporating the in situ P-doped LPCVD poly-Si films. • In situ P-doped LPCVD poly-Si passivating contacts integrated in n-TOPCon solar cells. • 241.3 cm 2 -large bifacial n-TOPCon devices with 23.01% certified efficiency demonstrated. • Using ≥ 150 nm of poly-Si and polished rear side improves the solar cell efficiency. • 1-cell glass-glass laminates of the devices pass damp heat and thermal cycling tests. • Roadmap to 25.5% efficiency presented.

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