Abstract
The article reports the results of our experimental investigation on the effect of UV light on the characteristics of n-ZnO/p-Si heterojunction. c-Axis oriented zinc oxide (ZnO) films were deposited by thermal evaporation technique on p-type silicon (Si) substrates to form ZnO/Si heterojunctions. Both large-area and nanoscale heterojunction configurations were studied. The measured current–voltage characteristics in dark and illuminated conditions confirm the rectifying behavior of the heterojunctions and an excellent UV response. The responsivity values were measured to be of 0.18 and 0.12 A/W to UV light (365nm) for large-area and nanoscale heterojunctions, respectively. The values are comparable with those offered by other commercial UV detectors. The nanoscale heterojunction device can find applications in nanophotonics.
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