Abstract
In this work, we selected a magnetic-semiconductor as an interlayer and investigated the electronic transport properties in the ferromagnetic/ferromagnetic-semiconductor/ferromagnetic (FM/FS/FM) trilayers. The results indicate that the large TMR comparable to that in ferromagnetic/metal oxide/ferromagnetic sandwich can be obtained in the FM/FS/FM multilayers with considering the spin filter effect in the magnetic semiconductor layer. Moreover, the transmission coefficient and TMR can be tuned through thickness, Rashba spin-orbit coupling strength and molecular field of the magnetic semiconductor. Our calculations could provide a way to design the semiconductor spintronic devices with excellent and controllable properties.
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