Abstract
We have observed very large drain current fluctuations over time in polysilicon thin film transistors (TFTs). The noise with 1/f power spectra in TFTs is found to be about 104 times larger than that in single-crystalline Si metal oxide semiconductor (MOS) transistors. The influence of 1/f noise in TFTs on static random access memory (SRAM) cell stability is clarified for the first time. Maintaining a high on-current and lowering of the grain-boundary barrier are found to be essential for increasing stability.
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